Irf250 Mosfet
The IRF250 is a 200V single N-channel HEXFET® MOSFET hermetically sealed with extremely low on-resistance with high transconductance, superior reverse energy and diode recovery dv/dt capability using Hi-Rel technology.
IRF250 Mosfet amplifier is using for HI-FI audio systems. Nowadays it is used as a power subwoofer amplifier driver board. The IRF250 MOSFET amplifier circuit is very easy to build, because of few components we get the power output around 200 watts at 4-ohm impedance.
IRF250 mosfet amplifier
200w IRF 250 amplifier circuit diagram
- IRF250: N-CHANNEL POWER MOSFETS: Intersil Corporation: IRF250: 30A, 200V, 0.085 Ohm, N-Channel Power MOSFET: IXYS Corporation: IRF250: High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series: New Jersey Semi-Conduct. IRF250: N-CHANNE POWER MOSFETS: Inchange Semiconductor. IRF250: Nanosecond Switching Speed: Seme LAB.
- IRFP250, SiHFP250Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200 Repetitive Avalanche Rated AvailableRDS (on) VGS = 10 V 0.085 Isolated Central Mounting HoleRoHS.Qg (Max.) (nC) 140COMPLIANT Fast SwitchingQgs (nC) 28 Ease of ParallelingQgd (nC) 74 Simple Drive RequirementsConfiguration Single Compli.
- N-CHANNEL POWER MOSFETS, IRF250 datasheet, IRF250 circuit, IRF250 data sheet: SAMSUNG, alldatasheet, datasheet, Datasheet search site for Electronic Components.
- International Rectifier IRF250 TO-3 Pkg 200V 30A N-Channel HEXFET Transistors Quantity: 3 GoldenO Part# 6486 Inventory Class New Old Stock Manufacturer IR (International Rectifier) Part Number IRF250 Date Code 9444 Specifications See Product Data Sheet Product Data Sheet Data Sheet 18:9-3-4 / 3oz PE FC.
Components required
The power amplifier is working with four pair of IRF250 mosfets. They are easily avilabe in nearest electronic shops. the circuit is assembled and the working is awsome.
The four irf250n MOSFET circuit designed as a mono audio amplifier. you can able to make it as a stereo audio amplifier by building the same circuit. connect left and right input audio signals to use as a powerful stereo audio amplifier. The working audio signal range is very awesome. it can work at the audio signals from 20HZ to 20Khz range. The 20Hz range the bass region work and performance is very nice.
IRF250 mosfet amplifier circuit supply voltage
The power supply for the better working we will provide the input voltage of 45v. The symmetrical or dual polarity supply to be injected. That’s mean -45 v 0v +45v respectively. use 50v nearest transformer with 5Amps for mono. If you are using this amplifier in the stereo mode you need to add extra power to the supply means you need to increase the input ampere up to 8 amperes.
For rectification, purposes use 35amps bridge metal diode and use a capacitor of 4700uf at least. increase the pair of irf250 MOSFET to increase the power output of the audio amplifier. you can able to increase the audio amplifier power up to 500watts.
Also, check other interesting Audio amplifier circuits here
Type Designator: IRFP250
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 180 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 33 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 117 nC
Critical update macbook pro. Rise Time (tr): 50 nS
Drain-Source Capacitance (Cd): 420 pF
Maximum Drain-Source On-State Resistance (Rds): 0.085 Ohm
Package: TO247
IRFP250 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFP250 Datasheet (PDF)
0.1. irfp250.pdf Size:271K _st
IRFP250N-CHANNEL 200V - 0.073 - 33A TO-247PowerMeshII MOSFETTYPE VDSS RDS(on) IDIRFP250 200V
0.2. irfp250npbf.pdf Size:180K _international_rectifier
PD - 95007AIRFP250NPbFHEXFET Power MOSFETl Advanced Process Technologyl Dynamic dv/dt RatingDVDSS = 200Vl 175C Operating Temperaturel Fast Switchingl Fully Avalanche RatedRDS(on) = 0.075Gl Ease of Parallelingl Simple Drive RequirementsID = 30Al Lead-Free SDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechni
0.3. irfp250-253.pdf Size:501K _international_rectifier
Irf250 Mosfet Datasheet
0.4. irfp250pbf.pdf Size:3344K _international_rectifier
PD - 95008IRFP250PbF Lead-Freewww.irf.com 12/11/04IRFP250PbF2 www.irf.comIRFP250PbFwww.irf.com 3IRFP250PbF4 www.irf.comIRFP250PbFwww.irf.com 5IRFP250PbF6 www.irf.comIRFP250PbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)- D -3.65 (.143)5.30 (.209)15.90 (.626) 3.55 (.140)4.70 (.185)15.30 (.602)0.25 (.010) M D B M2.
0.5. irfp250.pdf Size:164K _international_rectifier
0.6. irfp250mpbf.pdf Size:636K _international_rectifier
PD - 96292IRFP250MPbFHEXFET Power MOSFETl Advanced Process Technologyl Dynamic dv/dt RatingDVDSS = 200Vl 175C Operating Temperaturel Fast Switchingl Fully Avalanche RatedRDS(on) = 0.075Gl Ease of Parallelingl Simple Drive RequirementsID = 30Al Lead-Free SDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniq
0.7. irfp250n.pdf Size:122K _international_rectifier
PD - 94008IRFP250NHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 200V Dynamic dv/dt Rating 175C Operating Temperature Fast SwitchingRDS(on) = 0.075G Fully Avalanche Rated Ease of ParallelingID = 30AS Simple Drive RequirementsDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve extreme
0.8. irfp250a.pdf Size:926K _samsung
Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.085 Rugged Gate Oxide Technology Lower Input CapacitanceID = 32 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.071 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Val
0.9. irfp250 sihfp250.pdf Size:1453K _vishay
IRFP250, SiHFP250Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 0.085 Isolated Central Mounting HoleRoHS*Qg (Max.) (nC) 140COMPLIANT Fast SwitchingQgs (nC) 28 Ease of ParallelingQgd (nC) 74 Simple Drive RequirementsConfiguration Single Compli
0.10. irfp250r irfp252r.pdf Size:188K _harris_semi
0.11. irfp250npbf.pdf Size:260K _inchange_semiconductor
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP250NPBFFEATURESWith TO-247 packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Disk diet.
0.12. irfp250m.pdf Size:241K _inchange_semiconductor
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP250MIIRFP250MFEATURESStatic drain-source on-resistance:RDS(on)75mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V
0.13. irfp250.pdf Size:400K _inchange_semiconductor
iscN-Channel MOSFET Transistor IRFP250FEATURESLow drain-source on-resistance:RDS(ON) 85m @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
0.14. irfp250n.pdf Size:241K _inchange_semiconductor
Irf250 Mosfet Datasheet Pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP250NIIRFP250NFEATURESStatic drain-source on-resistance:RDS(on)75mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V
Datasheet: IRFP240A, IRFP240FI, IRFP241, IRFP242, IRFP243, IRFP244, IRFP244A, IRFP245, IRF630, IRFP250A, IRFP251, IRFP252, IRFP253, IRFP254, IRFP254A, IRFP255, IRFP260.
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Irf250 Mosfet
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Irf250 Mosfet Datasheet